Understanding graphene/GaN and other 2D/3D interfaces by UV illumination could be crucial for next-gen electronics

Researchers from the Nagoya Institute of Technology (NITech) in Japan have developed a method to examine the connections between two-dimensional layers of atoms and semiconductors, which could prove useful in the future for ensuring the performance of next-gen electronics.

The fabrication process of vertical Schottky junction with monolayer graphene on free-standing GaN imageThe fabrication process of a monolayer graphene on free-standing GaN interface

The team applied a layer of graphene to gallium nitride, a commonly used semiconductor. The graphene is made of a single layer of atoms, while the gallium nitride is a three-dimensional structure. Together, graphene and gallium nitride are known as a heterojunction device, with significant sensitivity to the interface properties of metal and semiconductors.

Ultraviolet light on a graphene surface could eliminate toxic mercury in UV light devices

A research team led by professors Helge Weman and Bjørn-Ove Fimland at the Norwegian University of Science and Technology (NTNU) has succeeded in creating ultraviolet light on a graphene surface. This could be beneficial for eliminating the toxic mercury element common in ultraviolet light devices that are used to kill bacteria and viruses.

Schematic of a graphene-based UV LED image Nanocolumn design and SEM image of grown nanocolumns

“We’ve created a new electronic component that has the potential to become a commercial product. It’s non-toxic and could turn out to be cheaper, and more stable and durable than today’s fluorescent lamps. If we succeed in making the diodes efficient and much cheaper, it’s easy to imagine this equipment becoming commonplace in people’s homes. That would increase the market potential considerably,” says PhD candidate Ida Marie Høiaas.

Vittoria to launch new range of graphene-enhanced bicycle tires

Italian bicycle tire manufacturer Vittoria Industries recently announced that it is launching a new range of products employing a second generation of its graphene-filler technology. The graphene supplier is assumed to be Perpetuus Carbon, as the two companies signed a long-term supply agreement for graphene materials.

Vittoria's graphene 2.0 bicycle tires image

It was said that while the first-generation generally enhanced the performance of tires, the new 2.0 graphene is functionalized to improve specific tire performances, targeting metrics like speed, wet grip, durability and puncture resistance.

Researchers develop a graphene-based biosensor that detects bacterial presence

Researchers from Myongji University, Sungkyunkwan University, Gachon University and Korea Institute of Science and Technology in South Korea, along with U.S-based Villanova University, have developed a new device concept for bacterial sensing by Raman spectroscopy and voltage-gated monolayer graphene.

New graphene-based biosensor for bacteria image

Synthesis of the monolayer graphene was done by chemical vapor deposition (CVD) on a Cu foil, which was eventually channelized onto a SiO2 /Si substrate. Modification of Raman spectra is examined in the study in order to develop ultra-sensitive biosensing techniques for the detection, identification, differentiation and classification of bacteria associated with infectious diseases.

Directa Plus secures patent for graphene-enhanced golf balls

Directa Plus logoDirecta Plus has recently been awarded a patent in Italy to make golf balls using its G+ graphene enhancement. G+ compounds in golf balls can reportedly make professionals hit them even further while less skilled players will enjoy improved swing and shot control.

"Using our G+ product in golf balls, for both the amateur and professional game is an exciting opportunity to enter a large sporting market," said Giulio Cesareo, the firm's chief executive.

Laser technique that opens a bandgap in graphene could allow for next-gen graphene electronics

Researchers from Purdue University, the University of Michigan and the Huazhong University of Science and Technology have used a technique called "laser shock imprinting" to permanently stress graphene into having a band gap, which could mean it would be posiible to use it in various electronic components.

The researchers used a laser to create shock wave impulses that penetrated an underlying sheet of graphene. The laser shock stretches the graphene onto a permanent, trench-like mold. This caused the widening of band gap in graphene to a record 2.1 electronvolts. Previously, scientists achieved 0.5 electronvolts, barely reaching the benchmark to make graphene a semiconductor like silicon.