Researchers from the Rice University have developed highly transparent (95%), flexible, nonvolatile resistive memory devices based on silicon oxide (SiOx) and graphene. This research began in 2008 when they discovered that silicon oxide itself can be a switch. The researchers placed the SiOx and crossbar graphene terminals on flexible plastic.
The new design is much simpler than current flash memory devices as it uses only two terminals and can be stacked in 3D configurations. This can vastly increase the density of memory devices. This memory can also be made in a multi-state mode (i.e. not just binary 1/0).